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• W1966203472 endingPage "626" @default.
• W1966203472 startingPage "618" @default.
• W1966203472 abstract "Abstract Summary: Plasma processes and film growth of textured zinc oxide deposited from oxygen and diethyl zinc utilizing expanding thermal argon plasma created by a cascaded arc is discussed. In all conditions explored, an excess of argon ions and low temperature electrons is available, which represent the chemistry taking place. The plasma induced decomposition mechanism involves charge exchange with argon ions, and consecutive dissociative recombination with electrons emanating from the cascaded arc plasma source. The presence of reactive atomic species, specifically Zn* and O*, is confirmed with the help of optical emission spectroscopic measurements. The absence of residual carbon in the films suggests a mechanism involving the dissociation of the ZnC bonds in the plasma instead of at the surface. Film growth appears to proceed by the adsorption of particular zinc species, followed by subsequent reaction with oxygen, with the deposition rate being directly proportional to the arrival rate of the particular reactive species. It is suggested that atomic zinc adsorbs on the surface in a weakly bounded highly mobile state. Best intrinsic transparent conducting oxide quality, that is film conductivity, is obtained at the highest deposition rate. Expanding thermal plasma surface textured zinc oxide film growth. magnified image Expanding thermal plasma surface textured zinc oxide film growth." @default.
• W1966203472 created "2016-06-24" @default.
• W1966203472 creator A5011052562 @default.
• W1966203472 creator A5078580218 @default.
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• W1966203472 date "2005-09-28" @default.
• W1966203472 modified "2023-10-17" @default.
• W1966203472 title "Plasma Processes and Film Growth of Expanding Thermal Plasma Deposited Textured Zinc Oxide" @default.
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• W1966203472 doi "https://doi.org/10.1002/ppap.200500039" @default.
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