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- W1966208080 abstract "Epitaxial CoSi2 layers were in-situ grown using a sacrificial Si capping layer on p-Si0.83Ge0.17/p-Si(001) by metal organic vapor deposition (MOCVD) at 600°C using cyclopentadienyl cobalt, Co(η5-C5H5)(CO)2. The grown epitaxial CoSi2 layers remain thermally stable at the annealing temperature, TA≤800°C. The CoSi2/p-Si0.83Ge0.17/p-Si(001) samples annealed at TA≤850°C showed the sheet resistance values as low as cong5.6 Ω/. At TA=900°C, the observed increase in the sheet resistance value to cong14.7 Ω/ was attributed to the formation of CoSi phase with higher resistivity resulting from the direct interaction of Co with the SiGe alloy layer. The effective Schottky barrier heights (Bp), measured for the first time, ranged from 0.103 to 0.194 eV at the reverse bias of -5–0 V." @default.
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- W1966208080 date "2003-06-15" @default.
- W1966208080 modified "2023-10-18" @default.
- W1966208080 title "Formation and Properties of Epitaxial CoSi2Layers on p-Si0.83Ge0.17/p-Si(001) using a Si Capping Layer by Metal-Organic Chemical Vapor Deposition" @default.
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- W1966208080 doi "https://doi.org/10.1143/jjap.42.3350" @default.
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