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• W1966236833 abstract "Metal-semiconductor-metal (MSM) photodetectors based on graphene/p-type Si Schottky junctions are fabricated and characterized. Thermionic emission dominates the transport across the junctions above 260 K with a zero-bias barrier height of 0.48 eV. The reverse-bias dependence of the barrier height is found to result mostly from the Fermi level shift in graphene. MSM photodetectors exhibit a responsivity of 0.11 A/W and a normalized photocurrent-to-dark current ratio of 4.55 × 104 mW−1, which are larger than those previously obtained for similar detectors based on carbon nanotubes. These results are important for the integration of transparent, conductive graphene electrodes into existing silicon technologies." @default.
• W1966236833 created "2016-06-24" @default.
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• W1966236833 date "2013-01-07" @default.
• W1966236833 modified "2023-10-01" @default.
• W1966236833 title "Metal-semiconductor-metal photodetectors based on graphene/<i>p</i>-type silicon Schottky junctions" @default.
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• W1966236833 doi "https://doi.org/10.1063/1.4773992" @default.
• W1966236833 hasPublicationYear "2013" @default.
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