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• W1966238224 abstract "GeCu(6 nm)/Si(6 nm) bilayer recording thin film was prepared by magnetron sputtering on nature oxidized silicon wafer and polycarbonate substrate by magnetron sputtering. The thermal property, crystallization mechanism, and recording characteristics of the GeCu/Si bilayer thin film were investigated. Thermal analysis shows that the GeCu/Si bilayer thin film has two reflectivity changes with the temperature ranges, 120 °C ∼ 165 °C and 310 °C∼ 340 °C. Dynamic tests show that the optimum jitter values at recording speeds of 1X, 2X, 4X, and 5X are 5.8%, 6%, 5.9%, and 6%, respectively. It indicates that GeCu/Si bilayer film is potentially useful in write-once blu-ray optical disc." @default.
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• W1966238224 date "2011-06-01" @default.
• W1966238224 modified "2023-09-26" @default.
• W1966238224 title "Crystallization mechanism and recording characteristics of GeCu/Si bilayer for write-once blue laser optical recording" @default.
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• W1966238224 doi "https://doi.org/10.1109/inec.2011.5991749" @default.
• W1966238224 hasPublicationYear "2011" @default.
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