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• W1966250966 startingPage "021502" @default.
• W1966250966 abstract "The authors investigated the characteristics of ZnO films grown on a-plane (11-20) sapphire substrates at 773–873 K using a reaction between dimethylzinc and high-temperature H2O generated by a catalytic reaction on Pt nanoparticles. The growth rate was 0.02–0.07 μm min−1. The largest electron mobility and the smallest residual carrier concentration for the ZnO films were 169 cm2 V−1 s−1 and 1.6 × 1017 cm−3, respectively. X-ray diffraction patterns for the ZnO films exhibited intense (0002) and (0004) peaks associated with ZnO (0001) planes. The minimum full width at half maximum of the ω-rocking curve for ZnO (0002) was less than 0.1°. In a ZnO film with a high electron mobility, no rotational domains were identified using a ZnO (10-10) ϕ scan. From secondary ion mass spectroscopy, a hydrogen concentration of 3 × 1018 cm−3 and a boron concentration of 2–5 × 1017 cm−3 were determined. These were identified as extrinsic donor impurities." @default.
• W1966250966 created "2016-06-24" @default.
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• W1966250966 date "2014-03-01" @default.
• W1966250966 modified "2023-09-27" @default.
• W1966250966 title "Properties of zinc oxide films grown on sapphire substrates using high-temperature H₂O generated by a catalytic reaction on platinum nanoparticles" @default.
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• W1966250966 doi "https://doi.org/10.1116/1.4831969" @default.
• W1966250966 hasPublicationYear "2014" @default.
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