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• W1966253022 abstract "GaN nanopillar and nanostripe arrays with embedded InGaN/GaN multi quantum wells (MQWs) were fabricated from planar wafers with different quantum well widths using holographic lithography and subsequent reactive ion etching. Although the etching process led to a reduction in the MQW related luminescence, the etch related damage was successfully healed through annealing in NH3/N2 mixtures under optimized conditions, and the annealed nanopatterned samples exhibited enhanced photoluminescence (PL) compared to the planar wafers. Angular-resolved PL measurements revealed extraction of guided modes from the nanopillar and nanostripe arrays (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)" @default.
• W1966253022 created "2016-06-24" @default.
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• W1966253022 date "2007-06-01" @default.
• W1966253022 modified "2023-09-24" @default.
• W1966253022 title "Optical properties of GaN nanopillar and nanostripe arrays with embedded InGaN/GaN multi quantum wells" @default.
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• W1966253022 doi "https://doi.org/10.1002/pssb.200674752" @default.
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