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• W1966280010 abstract "We examined the stability of amorphous In–Ga–Zn–O (a-IGZO) thin-film transistors (TFTs) under positive bias temperature stress (PBTS) and negative bias temperature stress (NBTS). The threshold voltage of a-IGZO TFTs shifted in the negative direction under NBTS, while there was minimal threshold voltage shift under PBTS. We also measured the relaxation time of the threshold voltage shifts under NBTS and conducted device simulations. Our results suggest that the threshold voltage shifts under NBTS are caused by a mechanism similar to that under negative bias illumination stress (NBIS). Furthermore, we found that this threshold voltage shift can be reduced by proper back-channel passivation using SiO2." @default.
• W1966280010 created "2016-06-24" @default.
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• W1966280010 date "2014-11-21" @default.
• W1966280010 modified "2023-09-26" @default.
• W1966280010 title "Thermally enhanced threshold voltage shifts in amorphous In–Ga–Zn–O thin-film transistor" @default.
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• W1966280010 doi "https://doi.org/10.7567/jjap.53.125802" @default.
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