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• W1966283038 abstract "In this paper, a study of the leakage current through strained p+ n Si 1-x Ge x /Si hetero-junctions is presented. The reduction in the band gap, induced by stress forces, and the doping level at the hetero-interface, due to the use of halo implantations, are varied by changing the Ge content and the recess depth. A comparison between simulation results and experimental data is presented to analyze the suitability of the models used in this work. An optimization study to decrease the band-to-band tunneling component in the leakage current as a function of these two technological parameters is presented." @default.
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• W1966283038 date "2011-02-01" @default.
• W1966283038 modified "2023-10-04" @default.
• W1966283038 title "Ge content and recess depth dependence of the band-to-band tunneling current in Si<inf>1-x</inf>Ge<inf>x</inf>/Si hetero-junctions" @default.
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• W1966283038 doi "https://doi.org/10.1109/sced.2011.5744201" @default.
• W1966283038 hasPublicationYear "2011" @default.
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