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- W1966356654 abstract "Conductance-voltage and capacitance-voltage curves of metal-oxide semiconductor (MOS) capacitors on n-type silicon were investigated in the temperature range between room temperature and 200°C. Plots of the inversion-layer conductance versus reciprocal temperature show a sequence of two activation energies: one corresponding to the temperature dependence of the intrinsic carrier density n <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>i</inf> , the other to that of n <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>i</inf> . The low-temperature range is characterized by recombination-generation in the space-charge region, the high-temperature range by diffusion current from the bulk. The technique permits measurement of bulk lifetime for the two regimes and determination of room temperature cutoff frequency for the channel." @default.
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- W1966356654 date "1967-03-01" @default.
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- W1966356654 title "Temperature Dependence of Inversion-Layer Frequency Response in Silicon" @default.
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- W1966356654 doi "https://doi.org/10.1002/j.1538-7305.1967.tb04232.x" @default.
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