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- W1966356962 endingPage "3918" @default.
- W1966356962 startingPage "3913" @default.
- W1966356962 abstract "Kink effects (abrupt increases in drain current) were observed with an abrupt increase of gate current (IG), substrate current (Isub), substrate potential (Vsub), and photoemission intensity (Iphoto) in GaAs metal–semiconductor field-effect transistors (MESFETs) with a lightly doped drain (LDD) structure and an Al0.2Ga0.8As/GaAs heterobuffer layer. The kink drain voltage (VKD) increases as substrate temperature increases. Since impact ionization has a negative coefficient for increase of temperature, the increase of VKD indicates that impact ionization occurs at VKD. VKD also increases as VG becomes more negative and as the ratio of the dose of the silicon ions is reduced in the LDD region. Thus it is confirmed that impact ionization occurs at the drain side along the channel current path because those changes of VG and dose ratio reduce the electric field at the drain-side channel. In addition, impact ionization coefficients were calculated from IG and Isub based on the method proposed by Hui et al. Both the coefficients were exponentially proportional to the negative inverse of the electric field, although the magnitude of Isub was approximately 250× greater than that of IG. On the other hand, it was found that Iphoto was linearly proportional to Vsub. It suggests that Iphoto depends on the number of holes which overflow the n-GaAs channel/i-GaAs buffer interface potential barrier into the channel layer. These behaviors of IG, Isub, Iphoto, and Vsub are attributed to this FET structure which has a thin channel layer with a high donor density and a heterobuffer layer." @default.
- W1966356962 created "2016-06-24" @default.
- W1966356962 creator A5022430742 @default.
- W1966356962 creator A5028509962 @default.
- W1966356962 date "1995-04-15" @default.
- W1966356962 modified "2023-10-14" @default.
- W1966356962 title "Impact ionization in GaAs metal–semiconductor field‐effect transistors with a lightly doped drain structure and an Al0.2Ga0.8As/GaAs heterobuffer layer" @default.
- W1966356962 cites W1966570898 @default.
- W1966356962 cites W1989304087 @default.
- W1966356962 cites W2038309827 @default.
- W1966356962 cites W2055027976 @default.
- W1966356962 cites W2060801129 @default.
- W1966356962 cites W2086575525 @default.
- W1966356962 cites W2087021197 @default.
- W1966356962 cites W2104273655 @default.
- W1966356962 cites W2120473193 @default.
- W1966356962 cites W2138584249 @default.
- W1966356962 cites W2168774569 @default.
- W1966356962 doi "https://doi.org/10.1063/1.358570" @default.
- W1966356962 hasPublicationYear "1995" @default.
- W1966356962 type Work @default.
- W1966356962 sameAs 1966356962 @default.
- W1966356962 citedByCount "4" @default.
- W1966356962 crossrefType "journal-article" @default.
- W1966356962 hasAuthorship W1966356962A5022430742 @default.
- W1966356962 hasAuthorship W1966356962A5028509962 @default.
- W1966356962 hasConcept C108225325 @default.
- W1966356962 hasConcept C111368507 @default.
- W1966356962 hasConcept C113196181 @default.
- W1966356962 hasConcept C119599485 @default.
- W1966356962 hasConcept C121332964 @default.
- W1966356962 hasConcept C127313418 @default.
- W1966356962 hasConcept C127413603 @default.
- W1966356962 hasConcept C145148216 @default.
- W1966356962 hasConcept C145598152 @default.
- W1966356962 hasConcept C165801399 @default.
- W1966356962 hasConcept C171250308 @default.
- W1966356962 hasConcept C172385210 @default.
- W1966356962 hasConcept C178790620 @default.
- W1966356962 hasConcept C185592680 @default.
- W1966356962 hasConcept C192562407 @default.
- W1966356962 hasConcept C198291218 @default.
- W1966356962 hasConcept C26873012 @default.
- W1966356962 hasConcept C2777289219 @default.
- W1966356962 hasConcept C2779227376 @default.
- W1966356962 hasConcept C32921249 @default.
- W1966356962 hasConcept C43617362 @default.
- W1966356962 hasConcept C49040817 @default.
- W1966356962 hasConcept C57863236 @default.
- W1966356962 hasConcept C60799052 @default.
- W1966356962 hasConcept C62520636 @default.
- W1966356962 hasConceptScore W1966356962C108225325 @default.
- W1966356962 hasConceptScore W1966356962C111368507 @default.
- W1966356962 hasConceptScore W1966356962C113196181 @default.
- W1966356962 hasConceptScore W1966356962C119599485 @default.
- W1966356962 hasConceptScore W1966356962C121332964 @default.
- W1966356962 hasConceptScore W1966356962C127313418 @default.
- W1966356962 hasConceptScore W1966356962C127413603 @default.
- W1966356962 hasConceptScore W1966356962C145148216 @default.
- W1966356962 hasConceptScore W1966356962C145598152 @default.
- W1966356962 hasConceptScore W1966356962C165801399 @default.
- W1966356962 hasConceptScore W1966356962C171250308 @default.
- W1966356962 hasConceptScore W1966356962C172385210 @default.
- W1966356962 hasConceptScore W1966356962C178790620 @default.
- W1966356962 hasConceptScore W1966356962C185592680 @default.
- W1966356962 hasConceptScore W1966356962C192562407 @default.
- W1966356962 hasConceptScore W1966356962C198291218 @default.
- W1966356962 hasConceptScore W1966356962C26873012 @default.
- W1966356962 hasConceptScore W1966356962C2777289219 @default.
- W1966356962 hasConceptScore W1966356962C2779227376 @default.
- W1966356962 hasConceptScore W1966356962C32921249 @default.
- W1966356962 hasConceptScore W1966356962C43617362 @default.
- W1966356962 hasConceptScore W1966356962C49040817 @default.
- W1966356962 hasConceptScore W1966356962C57863236 @default.
- W1966356962 hasConceptScore W1966356962C60799052 @default.
- W1966356962 hasConceptScore W1966356962C62520636 @default.
- W1966356962 hasIssue "8" @default.
- W1966356962 hasLocation W19663569621 @default.
- W1966356962 hasOpenAccess W1966356962 @default.
- W1966356962 hasPrimaryLocation W19663569621 @default.
- W1966356962 hasRelatedWork W1533030568 @default.
- W1966356962 hasRelatedWork W1964338871 @default.
- W1966356962 hasRelatedWork W1981504582 @default.
- W1966356962 hasRelatedWork W2139871202 @default.
- W1966356962 hasRelatedWork W2170848481 @default.
- W1966356962 hasRelatedWork W2276988595 @default.
- W1966356962 hasRelatedWork W2743194952 @default.
- W1966356962 hasRelatedWork W3093732615 @default.
- W1966356962 hasRelatedWork W3115037099 @default.
- W1966356962 hasRelatedWork W2181763586 @default.
- W1966356962 hasVolume "77" @default.
- W1966356962 isParatext "false" @default.
- W1966356962 isRetracted "false" @default.
- W1966356962 magId "1966356962" @default.
- W1966356962 workType "article" @default.