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- W1966366284 abstract "A technology for the fabrication of multilayer semiconductor membranes based on pore formation in Si, GaP, and InP substrates by electrolytic etching in acidic and alkaline solutions has been developed. Studies of the membranes by X-ray diffraction and transmission and scanning electron microscopy showed that solid ultrathin (down to 10 nm) and porous (1-200-μm-thick) layers have essentially single-crystal structure with a degree of structural perfection not worse than that of the starting substrate. The thickness of the damaged layer of the Si membrane pore walls is not over 1 nm. A special technology permitting fabrication of cellular Si membranes with a critical breaking stress of 61.3 ± 5 kPa, which exceeds by more than a factor 12 the critical breaking stresses of a completely porous silicon substrate of the same area and thickness, has been developed. It is shown that the membranes are highly permeable only for gases of light atoms (hydrogen, helium), in particular, with a H2/O 2 selectivity of 10 3 . The behavior of their permeance with temperature was found to be of an activated nature (Arrhenius law). This also implies the absence of microdefects in the central ultrathin solid layer, which accounts for the high selectivity of the membrane as a whole. The permeance of a multilayer cellular Si membrane for hydrogen was found to be 10 -7 mol m -2 s - 1 Pa - 1 at 60 °C. Calculations suggest that this value can be improved 4-fold by optimizing the technology employed in the fabrication of the thin solid layer. The Si membrane was found to be capable of providing a hydrogen flux necessary to supply a hydrogen fuel cell of a specific power of 300 mW/cm 2 . A Si membrane 1 cm 2 in area fabricated by this technology was used simultaneously for purification and support of the anode catalyst in an actual 100-mW hydrogen fuel cell." @default.
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- W1966366284 date "2007-04-01" @default.
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- W1966366284 title "Porous-Semiconductor-Based Hydrogen-Permeable Membrane" @default.
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- W1966366284 doi "https://doi.org/10.1021/ie060995f" @default.
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