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- W1966371409 abstract "A microscopical model for the Zn-doped CuO 2 plane is developed within the p-d model with strong correlations. Based on band structure calculations, Zn impurities are considered as vacancies for the d-states on Cu sites. Further reduction to an effective one-band model results in the t-J model with vacancies for the spin 1/2 d-states at the Zn-sites. By employing the T-matrix formalism for the Green functions in terms of the Hubbard operators the density of electronic states (DOS) is calculated. Symmetry analysis of the perturbation matrix shows that in the system with d-type electronic wave functions additional DOS of d-, p- and s-types appear due to the perturbation of local energy levels and the interaction between nearest neighbors around the vacancy. The local and resonant state formation caused by Zn impurities is analysed." @default.
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- W1966371409 date "2000-11-01" @default.
- W1966371409 modified "2023-09-27" @default.
- W1966371409 title "Electronic structure for Zn-doped copper-oxide planes" @default.
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- W1966371409 doi "https://doi.org/10.1016/s0921-4534(00)00483-4" @default.
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