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- W1966407312 abstract "This work reported the changes in the carrier concentration of a-GaAs <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>1-x</sub> N <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> thin films with different x value. The films were deposited by reactive magnetron sputtering at different sputtering pressure. The N content in the film increases by increasing the sputtering pressures. The free carrier concentration is increased as the N content increased." @default.
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- W1966407312 date "2012-08-01" @default.
- W1966407312 modified "2023-09-28" @default.
- W1966407312 title "Influence of N incorporation on the carrier concentration of sputtering-deposited a-GaAs<inf>1−x</inf>N<inf>x</inf> thin films" @default.
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- W1966407312 doi "https://doi.org/10.1109/icoom.2012.6316204" @default.
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