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• W1966434883 abstract "Intrinsic mobility and intrinsic channel resistance (R <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>CH</sub> ) of amorphous, In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) with varying channel length (L) are investigated using a gated four-probe back-channel-etched TFT design. The intrinsic R <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>CH</sub> is found to decrease from ~500 to ~250 kΩ per unit area by increasing V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>GS</sub> from 10 to 20 V. The intrinsic mobility is ~17 cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> /V·s, which is about 20% higher than that derived from the normal two-point probe measurements. Source and drain parasitic resistance (R <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>PAR</sub> ) of the a-IGZO TFTs is found to be of the same order of magnitude as the R <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>CH</sub> -which is different from hydrogenated amorphous-silicon (a-Si:H) TFTs, where TFT operation is dominated by R <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>PAR</sub> ." @default.
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• W1966434883 date "2014-06-01" @default.
• W1966434883 modified "2023-10-16" @default.
• W1966434883 title "Intrinsic Channel Mobility of Amorphous, In–Ga–Zn–O Thin-Film Transistors by a Gated Four-Probe Method" @default.
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• W1966434883 doi "https://doi.org/10.1109/ted.2014.2318611" @default.
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