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- W1966455536 abstract "Hafnium silicate-based Metal Oxide Semiconductor (MOS) capacitors were fabricated by atomic layer deposition. The interface evolution of the films with forming gas annealing was investigated. It is found that most of the slow interface states were passivated through Forming Gas Annealing (FGA), and the D it in the center of the band gap was estimated to be 2.3×1011 eV−1cm−2. It is also found that interface layer can react with HfO 2 to form HfSiO x in the process of FGA at elevated temperature, and the interface thickness was reduced to 0.4 nm after FGA at 600 °C." @default.
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- W1966455536 date "2012-10-01" @default.
- W1966455536 modified "2023-09-27" @default.
- W1966455536 title "The evolution of the HfSiO<inf>x</inf>/Si interface along with the increase of forming gas annealing temperature" @default.
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- W1966455536 doi "https://doi.org/10.1109/icsict.2012.6467832" @default.
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