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• W1966492956 abstract "Solution-processed indium gallium zinc oxide (IGZO) thin films as an active channel layer in thin-film transistors (TFTs) were successfully prepared by a spin-coating method using acetate- and nitrate-based precursors. In the range of , indium, gallium, and zinc precursors were dissociated and then hydrolyzed to metal hydroxides. compound was synthesized at and crystallized at . A spin-coated IGZO film annealed at had smooth morphology and fine grains with an average size of . In solution-processed IGZO TFTs using nanocrystalline films prepared at , the on-to-off ratio, a field effect mobility, and the subthreshold swing voltage were , , and /decade, respectively." @default.
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• W1966492956 date "2009-01-01" @default.
• W1966492956 modified "2023-10-08" @default.
• W1966492956 title "Formation Mechanism of Solution-Processed Nanocrystalline InGaZnO Thin Film as Active Channel Layer in Thin-Film Transistor" @default.
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• W1966492956 doi "https://doi.org/10.1149/1.2976027" @default.
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