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• W1966510162 abstract "New group III hydride precursors have been synthesized in high yield and their purities have been measured by atomic absorption spectroscopy analysis, ion chromatography and metal-organic vapour-phase epitaxy. With these compounds, which have no metal-to-carbon bond, a decrease in carbon incorporation into (Al, Ga)As/GaAs heterostructures is achieved. The efficient combination of these sources with organoarsines at lower V-to-III ratios allows for a replacement of the highly toxic AsH3 by new alternative group V precursors, which show remarkable lower toxicities." @default.
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• W1966510162 date "1993-02-01" @default.
• W1966510162 modified "2023-09-25" @default.
• W1966510162 title "New group III aluminium and gallium hydride precursors for metal-organic vapour-phase epitaxy" @default.
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• W1966510162 doi "https://doi.org/10.1016/0921-5107(93)90076-y" @default.
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