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• W1966555329 endingPage "4875" @default.
• W1966555329 startingPage "4868" @default.
• W1966555329 abstract "AlN thin films for acoustic wave devices were prepared by Microwave Plasma Enhanced Chemical Vapor Deposition under different process conditions, employing Si (100) and Pt (111)/SiO2/Si (100) substrates. The films were characterized by X-ray diffraction, Fourier transform infrared transmission spectroscopy, atomic force microscopy, scanning electron microscopy, and transmission electron microscopy. The values of the distance between the plasma and the tri-methyl-aluminum precursor injector, the radiofrequency bias potential, and the substrate temperature were central in the development of polycrystalline films. The choice of the chamber total pressure during deposition allowed for the development of two different crystallographic orientations, i.e., <0001> or <1010>. The film microstructures exhibited in general a column-like growth with rounded tops, an average grain size of about 40 nm, and a surface roughness lower than 20 nm under the best conditions." @default.
• W1966555329 created "2016-06-24" @default.
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• W1966555329 date "2008-06-01" @default.
• W1966555329 modified "2023-10-18" @default.
• W1966555329 title "Polycrystalline AlN films with preferential orientation by plasma enhanced chemical vapor deposition" @default.
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• W1966555329 doi "https://doi.org/10.1016/j.tsf.2007.09.030" @default.
• W1966555329 hasPublicationYear "2008" @default.
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