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• W1966577448 abstract "The electrical and optical properties of amorphous In-Tin-Zinc-Oxide(ITZO) deposited at room temperature using rf-magnetron sputtering were investigated. The amorphous ITZO thin films were obtained at the composition of In:Sn:Zn = 6:2:2, 4:3:3, and 2:4:4, but the ITZO (8:1:1) showed a crystalline phase of bixbyite structure of In2O3. The resistivity of ITZO could be controlled by oxygen pressure in the sputtering ambient. The resistivity of post-annealed ITZO thin films exhibited the dependence on the amount of Indium. Optical energy band gap and transmittance increased as the amount of indium in ITZO increased. For the device application with ITZO, the bottom-gated thin-film transistor using ITZO as a active channel layer was fabricated. It showed a threshold voltage of 1.42V and an on/off ratio of operated with saturation field-effect mobility of ." @default.
• W1966577448 created "2016-06-24" @default.
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• W1966577448 date "2014-10-31" @default.
• W1966577448 modified "2023-09-22" @default.
• W1966577448 title "Electrical and Optical Properties of Amorphous ITZO Deposited at Room Temperature by RF Magnetron Sputtering" @default.
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• W1966577448 doi "https://doi.org/10.5695/jkise.2014.47.5.239" @default.
• W1966577448 hasPublicationYear "2014" @default.
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