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- W1966651444 abstract "Ultrasmall gaps are forming in the crossing region of two perpendicular metal strips during the evaporation of the second strip provided the second layer is thinner than the first layer. This is due to the shadow cast by the first strip during the evaporation of the second. By changing the angle of evaporation of the second strip the size of the gaps can be tuned in the range from 3 nm to 10 nm. Structural characterization of gaps in that range requires high resolution transmission electron microscopy (TEM). Therefore these electrode structures are prepared on ultrathin (thickness 20 nm) electron transparent silicon nitride membranes. Ligand stabilized gold clusters (core size 1.5 nm) are attached to these electrode structures using a mercapto-polymer. TEM characterization of the cluster array in the ultrasmall gap allows to relate the number and position of the clusters in the gap region to future transport measurements." @default.
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- W1966651444 date "1999-05-01" @default.
- W1966651444 modified "2023-10-16" @default.
- W1966651444 title "Shadow evaporation method for fabrication of sub 10 nm gaps between metal electrodes" @default.
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- W1966651444 doi "https://doi.org/10.1016/s0167-9317(99)00052-0" @default.
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