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- W1966653408 abstract "Electron beam testing assisted by focused ion beam etching was examined. Before electron beam testing (EB testing), a small window was made in the passivation film by focused ion beam etching (FIB etching). EB testing was performed through this window. This method was useful because charge buildup on the passivation film is avoided during EB testing. The threshold voltage shift caused by FIB etching was permitted until the residual film thickness on the gate electrode became 0.5μm. This technique was applied to measure the internal voltage waveform of the 256K bit dynamic RAM and confirmed that it was effective for functional testing and failure analysis of VLSI circuits." @default.
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- W1966653408 date "1986-12-01" @default.
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- W1966653408 title "Electron beam testing of VLSI circuits assisted by focused ion beam etching" @default.
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- W1966653408 doi "https://doi.org/10.1016/0167-9317(86)90098-5" @default.
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