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• W1966673686 abstract "Time-of-flight experiments were performed to investigate charge carrier diffusion in InGaN quantum wells. A mere optical setup with high spatial resolution was established on the basis of confocal microphotoluminescence microscopy in order to measure charge carrier movement directly. We investigate a multiquantum well sample emitting light at about 510 nm and found an ambipolar lateral diffusion constant of $0.25ifmmodepmelsetextpmfi{}0.05phantom{rule{0.16em}{0ex}}{mathrm{cm}}^{2}/mathrm{s}$." @default.
• W1966673686 created "2016-06-24" @default.
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• W1966673686 date "2011-07-29" @default.
• W1966673686 modified "2023-10-09" @default.
• W1966673686 title "Time-of-flight measurements of charge carrier diffusion in In<mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline><mml:msub><mml:mrow /><mml:mi>x</mml:mi></mml:msub></mml:math>Ga<mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline><mml:msub><mml:mrow /><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:math>N/GaN quantum wells" @default.
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• W1966673686 doi "https://doi.org/10.1103/physrevb.84.035324" @default.
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