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- W1966680479 abstract "Chemical trends of Schottky barrier heights of ten kinds of metal contacts on hydrogen-terminated diamond (001) surfaces are estimated from the temperature dependence of their current-voltage characteristics. In addition to the measurements, the interface of the metal/hydrogen-terminated diamond is theoretically modeled including the carrier density of the surface conductive layer and the electron-affinity variation from the clean surface of the hydrogen-terminated diamond. Based on the model, a relation among the carrier density, the electron affinity variation, and the barrier heights are derived. The relation explains well experimental results of and other than the present work." @default.
- W1966680479 created "2016-06-24" @default.
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- W1966680479 date "2010-01-08" @default.
- W1966680479 modified "2023-10-14" @default.
- W1966680479 title "Schottky barrier heights, carrier density, and negative electron affinity of hydrogen-terminated diamond" @default.
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- W1966680479 doi "https://doi.org/10.1103/physrevb.81.045303" @default.
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