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- W1966684059 abstract "Besides the application of Si1−xGex as thin layers in electronic devices, well-defined mixed bulk crystals are successfully used for X–ray–, γ- and neutron-diffraction optics. For developing growth methods for such crystals, the shape of the growth interface and the striation pattern of the distribution of the components and the dopants must be known. Applying for the first time, the lateral photovoltage scanning (LPS) method to different Si1−xGex mixed crystals, their striation patterns and shapes of the growth interface have been determined even for highly dislocated crystals where X-ray topography is not able to show the Ge-striations. However, also dislocation slip lines can be observed clearly with LPS when using high optical excitation." @default.
- W1966684059 created "2016-06-24" @default.
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- W1966684059 date "2002-04-01" @default.
- W1966684059 modified "2023-10-17" @default.
- W1966684059 title "Lateral photovoltage scanning (LPS) method for the visualization of the solid–liquid interface of Si1−xGex single crystals" @default.
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- W1966684059 doi "https://doi.org/10.1016/s0022-0248(01)01940-6" @default.
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