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• W1966688521 endingPage "7130" @default.
• W1966688521 startingPage "7130" @default.
• W1966688521 abstract "Locations of S atoms on (NH 4 ) 2 S x -treated GaAs(100) surfaces annealed at 200°C and 400°C have been studied on atomic scale by X-ray photoemission spectroscopy (XPS), scanning tunneling microscopy (STM) and medium-energy ion scattering (MEIS) using blocking. XPS spectra showed that the growth of native oxide layers on GaAs surfaces was suppressed after (NH 4 ) 2 S x treatment and that most S atoms were bonded to only As or Ga atoms depending on the annealing temperature. STM observations revealed that S atoms on a GaAs(100) surface were reconstructed in a periodic structure of 1×1 in the case of annealing at 200°C, while 2×1 reconstruction was observed after annealing at 400°C. The distance between the S adsorbed layer and the uppermost layer of GaAs(100) could be estimated from the angle-resolved MEIS blocking spectra." @default.
• W1966688521 created "2016-06-24" @default.
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• W1966688521 date "1994-12-01" @default.
• W1966688521 modified "2023-09-23" @default.
• W1966688521 title "Atomic Sites of S on (NH₄)₂S_x-Treated GaAs(100) Surface" @default.
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• W1966688521 doi "https://doi.org/10.1143/jjap.33.7130" @default.
• W1966688521 hasPublicationYear "1994" @default.
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