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- W1966702502 abstract "Copper films were deposited by metalorganic chemical vapor deposition (MOCVD) using copper(I)-hexafluoroacetylacetonate vinyltrimethoxysilane [Cu(hfac)(VTMOS)] as the precursor in the presence of H 2 . In contrast to blanket growth in Ar, selective growth was maintained on TiN versus SiO 2 at a precursor partial pressure of 1.48×10 -2 Torr and 473 K by introducing H 2 as the ambient gas. A film growth modeling based on the Langmuir-Hinshelwood rate equation was established to describe the copper deposition at the initial nucleation stage in H 2 . The result suggested that H 2 physically adsorbed on TiN surface to hinder the nucleation of copper. Applying a dc bias on substrate surface showed that the film growth was accelerated by both positive and negative biases, indicating a disproportionation reaction dominated the film growth. The less promoted growth rate under positive bias was attributed to the steric factor between the intermediate Cu(hfac) and the charged substrate." @default.
- W1966702502 created "2016-06-24" @default.
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- W1966702502 date "2000-04-01" @default.
- W1966702502 modified "2023-09-26" @default.
- W1966702502 title "Film Growth Modeling of Metal Organic Chemical Vapor Deposition of Copper from Copper(I)-Hexafluoroacetylacetonate Vinyltrimethoxysilane in the Presence of Hydrogen" @default.
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- W1966702502 doi "https://doi.org/10.1143/jjap.39.1908" @default.
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