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- W1966703072 abstract "The current-voltage characteristics for the aniso-type heterojunction tunnel diodes taking into account the effect of interface states at the junction have been theoretically investigated. Tunnel diodes with n-Si/p-GaAs heterojunction have been fabricated and their electronic properties measured at various temperatures and frequencies. The experimental results are in good agreement with the theory. The heterojunction tunnel diodes have some inherent advantages but. the presence of interface states limits their applications." @default.
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- W1966703072 date "1975-01-01" @default.
- W1966703072 modified "2023-09-25" @default.
- W1966703072 title "Tunnelling and recombination processes in heterojunctions with interface states" @default.
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- W1966703072 doi "https://doi.org/10.1080/00207217508920371" @default.
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