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- W1966715130 abstract "3C–SiC films were epitaxially grown on a Si(100) substrate with a curved surface at 1000–1100°C by the hydrogen plasma cosputtering of the Si and C targets. The entire surface of a Si(100) crystal was pyramided by KOH solution etching. The surface of pyramids on the crystal was curved by selecting the etching conditions. SiC films were grown on a curved surface of the Si substrate above 950°C, and an (200)-oriented epitaxial growth of 3C–SiC was observed above 1000°C. No hollow voids were formed at the SiC/Si interface at growth temperatures below 1075°C. The formation of Si–C bonds was a thermally active reaction with an activation energy of 5.5 eV below 1000°C, which becomes 0 eV in the epitaxial growth above 1000°C. This small activation energy for the formation of Si–C bonds at a curved surface plays an important role in the prevention of hollow void formation at the SiC/Si interface." @default.
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- W1966715130 date "2005-10-01" @default.
- W1966715130 modified "2023-09-27" @default.
- W1966715130 title "Epitaxial Growth of Cubic SiC Film on Si Crystal with Curved Surface" @default.
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- W1966715130 doi "https://doi.org/10.1143/jjap.44.7351" @default.
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