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- W1966749649 abstract "Abstract Mo-silicided junctions were formed by using the ITM technique, which consists of ion implantation through metal (ITM) to induce metal-Si interface mixing and subsequent thermal annealing. Monte Carlo calculations (TRIM) and RBS-measurements show, that Mo recoil atoms do not influence the junction parameters. The sheet resistence for Mo-silicided junctions after furnace annealing is about 10 to 15 Ω/□. The leakage current densities of silicided n+ -p and p+ -n junctions are 2 to 5 nA/cm2. The wafer distribution of the leakage current shows also these low values after contact annealing in H2 for 30 min at 450–500°C of silicided junctions with Al (1% Si) contacts." @default.
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- W1966749649 date "1989-09-01" @default.
- W1966749649 modified "2023-09-27" @default.
- W1966749649 title "Mo-silicided shallow junctions formed by using the ITM technique and the influence of Mo recoil atoms" @default.
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- W1966749649 doi "https://doi.org/10.1016/0169-4332(89)90545-x" @default.
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