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• W1966753968 abstract "Preparation and characterization of CdSe thin film semiconductors, prepared by cathodic electrodeposition from an acid sulphate solution (CdSO4–SeO2) before and after thermal treatment in nitrogen atmosphere, were investigated. The effect of the bath temperature and how it affects the cadmium selenide (CdSe) deposits were studied. The formation of compact barrier layers of zinc blende CdSe was attained. Scanning electron microscopy and X-ray diffraction patterns present a remarkably intense cubic structure, even after thermal treatment. The Ni/CdSe/Au structure may exhibit rectifying properties depending on the temperature during the electrodeposition. Thermal annealing in nitrogen gas increases the conductivity of CdSe and intensifies the rectification properties of the Ni/CdSe/Au structure." @default.
• W1966753968 created "2016-06-24" @default.
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• W1966753968 date "2012-08-01" @default.
• W1966753968 modified "2023-09-27" @default.
• W1966753968 title "Structural and electrical properties of annealed CdSe films on Ni substrate" @default.
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• W1966753968 doi "https://doi.org/10.1016/j.tsf.2012.06.071" @default.
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