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• W1966778506 abstract "The modelling of Schottky m-i-p+ (SMIP) diodes fabricated on chemical vapour deposited (CVD) single crystal (SC) diamond intrinsic layers grown on highly boron doped CVD diamond substrates is reported. Variations in intrinsic layer thickness, Schottky metal type and operating temperature have been included in the analysis. Numerical models that take into account the activation of dopants, concentration and temperature dependant mobility and avalanche coefficients have been derived to successfully simulate experimental diamond devices." @default.
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• W1966778506 date "2006-02-01" @default.
• W1966778506 modified "2023-09-26" @default.
• W1966778506 title "Modelling of single-crystal diamond Schottky diodes for high-voltage applications" @default.
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• W1966778506 doi "https://doi.org/10.1016/j.diamond.2005.06.019" @default.
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