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• W1966821769 abstract "In this paper, we investigate the enhancement-mode (E-mode) <formula formulatype=inline xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink><tex Notation=TeX>${rm LaLuO}_{3}$</tex></formula> (LLO)-AlGaN/GaN metal-insulator-semiconductor high-electron mobility transistors (MIS-HEMTs) fabricated using fluorine (F) plasma ion implantation with a gate-dielectric-first planar process. The E-mode MIS-HEMTs exhibit a threshold voltage <formula formulatype=inline xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink><tex Notation=TeX>$(V_{rm TH})$</tex></formula> of 0.6 V, a peak transconductance of <formula formulatype=inline xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink><tex Notation=TeX>${sim}{rm 193}~{rm mS}/{rm mm}$</tex></formula> , a small hysteresis of 0.04 V in linear region characterized by a pulse-mode current-voltage measurement, and significantly suppressed current collapse under high-drain-bias switching conditions. X-ray photoelectron spectroscopy and secondary ion mass spectrometry analyses manifest that the negatively charged F ions penetrating into the (Al)GaN barrier layer serve as the primary <formula formulatype=inline xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink><tex Notation=TeX>$V_{rm TH}$</tex></formula> modulation mechanism, whereas the F ions in the fluorinated LLO film form chemical bonds with La/Lu atoms and become charge-neutral. The suppressed current collapse is verified as an advantageous byproduct of the F plasma ion implantation that also fluorinated the SiNx sidewalls in the vicinity of the gate electrode, and therefore, suppress electron injection to the gate-drain access region." @default.
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• W1966821769 date "2013-10-01" @default.
• W1966821769 modified "2023-10-16" @default.
• W1966821769 title "Fabrication and Characterization of Enhancement-Mode High-$kappa~{rm LaLuO}_{3}$-AlGaN/GaN MIS-HEMTs" @default.
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• W1966821769 doi "https://doi.org/10.1109/ted.2013.2277559" @default.
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