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- W1966825090 abstract "We succeeded in the realization of bulk multicrystalline silicon (mc-Si) with electrically inactive grain boundaries. A group of single-crystal Si wafers was used as an artificial multicrystalline seed with random grain boundaries. The crystal growth was carried out by the floating zone technique under ultrahigh vacuum at a growth rate of 1.0 mm/min. Under these conditions, most of the grain boundaries were spontaneously modified to Σ3. In contrast, random grain boundaries remained even after 40-mm growth when the growth rate was decreased to 0.2 mm/min. From these results, we suggest that the control of both the initial grain boundary configuration and the growth conditions is important to realize mc-Si with electrically inactive grain boundaries, which is a promising material for solar cell applications." @default.
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- W1966825090 date "2006-03-08" @default.
- W1966825090 modified "2023-10-16" @default.
- W1966825090 title "Realization of Bulk Multicrystalline Silicon with Controlled Grain Boundaries by Utilizing Spontaneous Modification of Grain Boundary Configuration" @default.
- W1966825090 doi "https://doi.org/10.1143/jjap.45.1734" @default.
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