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• W1966836927 abstract "This paper describes the characteristics of cubic silicon carbide (3C-SiC) films grown on a carbonized Si(100) substrate, using hexamethyldisilane (HMDS, Si2(CH3)6) as a safe organosilane single precursor in a nonflammable H2/Ar (H2 in Ar) mixture carrier gas by atmospheric pressure chemical vapor deposition (APCVD) at 1280°C. The growth process was performed under various conditions to determine the optimized growth and carbonization condition. Under the optimized condition, grown film has a single crystalline 3C-SiC with well crystallinity, small voids, low residual stress, low carrier concentration, and low RMS. Therefore, the 3C-SiC film on the carbonized Si (100) substrate is suitable to power device and MEMS fields. This paper describes the characteristics of cubic silicon carbide (3C-SiC) films grown on a carbonized Si(100) substrate, using hexamethyldisilane (HMDS, Si2(CH3)6) as a safe organosilane single precursor in a nonflammable H2/Ar (H2 in Ar) mixture carrier gas by atmospheric pressure chemical vapor deposition (APCVD) at 1280°C. The growth process was performed under various conditions to determine the optimized growth and carbonization condition. Under the optimized condition, grown film has a single crystalline 3C-SiC with well crystallinity, small voids, low residual stress, low carrier concentration, and low RMS. Therefore, the 3C-SiC film on the carbonized Si (100) substrate is suitable to power device and MEMS fields." @default.
• W1966836927 created "2016-06-24" @default.
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• W1966836927 date "2013-05-31" @default.
• W1966836927 modified "2023-10-18" @default.
• W1966836927 title "Influence of Carbonization Conditions in Hydrogen Poor Ambient Conditions on the Growth of 3C-SiC Thin Films by Chemical Vapor Deposition with a Single-Source Precursor of Hexamethyldisilane" @default.
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• W1966836927 doi "https://doi.org/10.5369/jsst.2013.22.3.175" @default.
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