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- W1966838081 abstract "Conductive atomic force microscopy has been used to measure the I-V characteristics of nanometric Au clusters embedded in a SiO2 film prepared by sputter deposition and low temperature annealing. Highly local asymmetric rectifier I-V characteristics were evidenced and modelled in terms of electrical transport through an asymmetric double barrier tunnel junction SiO2/Au cluster/SiO2. The threshold voltage depends strongly on the cluster size and barrier thickness according to the model given." @default.
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- W1966838081 date "2007-03-01" @default.
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- W1966838081 title "Structural and electrical characterization of gold nanoclusters in thin SiO2 films: Realization of a nanoscale tunnel rectifier" @default.
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- W1966838081 doi "https://doi.org/10.1016/j.mee.2006.10.090" @default.
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