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- W1966847520 abstract "We report on photo-excited trap-charge-collection spectroscopy, contrived to measure the density of deep-level traps near channel/dielectric interface in a working ZnO based thin-film transistor as a function of photon probe energy. Free charges trapped at a certain energy level are liberated by the correspondingly energetic photons and then electrically collected at the source/drain electrodes. During this photo-electric process, the threshold voltage of TFT shifts and its magnitude provides the density-of-state information of charge traps. In the present work, we directly characterized the density-of-state of ZnO based thin-film transistors with polymer-oxide double dielectrics after evaluating their gate stabilities." @default.
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- W1966847520 date "2010-08-23" @default.
- W1966847520 modified "2023-09-27" @default.
- W1966847520 title "Density of trap states measured by photon probe into ZnO based thin-film transistors" @default.
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- W1966847520 doi "https://doi.org/10.1063/1.3483763" @default.
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