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- W1966852073 abstract "The gap-state density of lightly P- and B-doped a-Si:H has been deduced from space-charge-limited-photocurrent (SCLPC) measurements under blue-light (ensuremath{lambda}=450 nm) illumination. The sample structures used (Schottky or back-to-back heterodiodes) completely eliminate the problem of active impurity (P or B) contamination, which could not be excluded in the conventional space-charge-limited-current measurements. First, we discuss the principle of this technique and postulate the conditions for deducing a meaningful expression for the density of states g(E). The validity of the deduced g(E) is experimentally verified. The energy profiles of g(E) for lightly P- [1--10 vppm in the gas phase (vppm=volume parts per million)] and B-doped (3--6 vppm) a-Si:H deduced from SCLPC prove to be qualitatively similar to those deduced from deep-level transient spectroscopy, the constant-photocurrent method, and photothermal deflection spectroscopy; g(E) below (above) the intrinsic Fermi level ${mathit{E}}_{mathit{f}0}$ is much larger than that above (below) it for P- (B-) doped films. However, the energy profile around ${mathit{E}}_{mathit{f}0}$ for 0.5 vppm ${mathrm{B}}_{2}$${mathrm{H}}_{6}$-doped films shows a low and almost flat [(3--5)ifmmodetimeselsetexttimesfi{}${10}^{15}$ ${mathrm{cm}}^{mathrm{ensuremath{-}}3}$ ${mathrm{eV}}^{mathrm{ensuremath{-}}1}$] density of states. This doping-induced modification in g(E) is discussed based on the existing data and models." @default.
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- W1966852073 date "1991-02-15" @default.
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- W1966852073 title "Gap-state density of lightly P- and B-doped<i>a</i>-Si:H deduced from space-charge-limited photocurrents" @default.
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- W1966852073 doi "https://doi.org/10.1103/physrevb.43.4871" @default.
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