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- W1966895983 abstract "Characterization of single event and low dose-rate TID effects in National Semiconductor's DS16F95 Radiation-Hardened RS-485 Transceiver is eported. Onset LET for upsetof less than 5 MeV-cm2/mg was observed, and a dependency on operating condition was established. Samples under ELDRS nvestigation adhered to electrical specification after irradiation to 30 krd(Si) at 10 mrd(Si)/s." @default.
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- W1966895983 date "2010-07-01" @default.
- W1966895983 modified "2023-09-23" @default.
- W1966895983 title "Single Event and Low Dose-Rate TID Effects in the DS16F95 RS-485 Transceiver" @default.
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- W1966895983 doi "https://doi.org/10.1109/redw.2010.5619503" @default.
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