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- W1966904989 abstract "Ion implantation is increasingly used to dope polysilicon gates to obtain lower resistivities and also to control the cumulative time-temperature cycling of VLSI wafers. Dry etching of polysilicon doped with phosphorus by ion implantation was studied using a parallel-plate etcher and two different etch chemistries sulfur haxafluoride-O{sub 2}-argon and SF6-CCl2F2-Ar. These two etch procedures were previously found to result in excellent etching of polysilicon which was doped with phosphorus by solid-source diffusion. Large differences in the cross-sectional profiles of ion-implanted polysilicon were found while using the two chemistries. SF6-dichlorodifluoromethane-Ar chemistry caused sharp notch-like undercuts, while the SF6-O2-Ar chemistry exhibited linewidth loss without any notching. Examples of the cross sections of ion-implanted polysilicon are presented along with a discussion of the possible mechanisms that cause the different cross-sectional profiles in the two etch chemistries. The notching is explained in terms of the variation in the dopant concentration and in the structure of ion-implanted polysilicon at different depths. The absence of notching in the cross section of ion-implanted polysilicon etched in the SF6-O2-Ar chemistry is explained by proposing that the interaction of oxygen in the SF6-O2-Ar chemistry with the etched surface makes the chemistry less sensitive to the dopant concentration in themore » etched material. Results of a simple experiment which support the proposed explanation are presented.« less" @default.
- W1966904989 created "2016-06-24" @default.
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- W1966904989 date "1989-09-01" @default.
- W1966904989 modified "2023-10-18" @default.
- W1966904989 title "Plasma Etching of Ion Implanted Polysilicon" @default.
- W1966904989 doi "https://doi.org/10.1149/1.2097569" @default.
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