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• W1966906670 abstract "The purpose of this paper is to characterize interface states in Au/InSb/InP(1 0 0) Schottky-type diodes and determine the effect of InSb surface preparation on the energy density distribution and relaxation time of the interface state. In the latter diode, InSb forms a fine restructuration layer allowing to block In atoms migration to surface. We have proceeded as follows: first, a great amount of antimony has been evaporated and, as a second step, the excess antimony is removed by heating the substrate at 300°C. The characteristic parameters of the interface states are derived from the capacitance-voltage C(VG), conductance–voltage G(VG) measured as a function of frequency and current–voltage I(VG) under forward biases. The mean density of interface states Nss estimated was 3.05×1012 eV−1 cm−2, the interface states were responsible for the non-ideal behavior of the I(VG) characteristics of the diodes. The relaxation times are independent of the bias and varies with Nss in the range 7.1×10−4 s and 3.7×10−3 s." @default.
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• W1966906670 date "2000-05-01" @default.
• W1966906670 modified "2023-10-09" @default.
• W1966906670 title "Characterization of interface states at Au/InSb/InP(100) Schottky barrier diodes as a function of frequency" @default.
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• W1966906670 doi "https://doi.org/10.1016/s0042-207x(00)00131-7" @default.
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