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- W1966972893 abstract "Germanium [111] epitaxial films deposited in an undoped flow system from at about 850°C are known to be high resistivity p‐type suitable for device manufacture. This paper describes further investigation of the quality of such films. Electron transmission micrographs showed no difference in general between these films and thin sections of germanium grown from the melt. A decrease in room temperature film conductivity as a function of annealing time at 550°C suggested that the principal impurity was copper which was precipitating at a slow rate characteristic of germanium with less than 103 dislocations/cm2. The temperature dependence of carrier concentration at low temperature was characteristic of compensation by about 1013 cm−3 donors. The most sensitive test of the quality of these films was provided by the low‐temperature Hall mobility which was at 33°K and agreed within approximately 10% with mobility in conventional p‐type germanium with 1014 impurities/cm3." @default.
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- W1966972893 date "1963-01-01" @default.
- W1966972893 modified "2023-09-27" @default.
- W1966972893 title "Crystallographic and Electrical Properties of Epitaxial Germanium" @default.
- W1966972893 doi "https://doi.org/10.1149/1.2425925" @default.
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