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- W1966979969 abstract "We have succeeded for the first time in artificially tuning the conduction and valence-band barrier heights at an abrupt intrinsic semiconductor-semiconductor heterojunction via a doping interface dipole (DID). This is achieved by means of ultrathin ionized donor and acceptor sheets in situ grown within ≲100 Å from the heterointerface by molecular beam epitaxy. In the limit of a few atomic layers separation between the charge sheets this amounts to modify the effective band-edge discontinuities. A near one order of magnitude enhancement in the photocollection efficiency of an abrupt AlGaAs/GaAs heterojunction has been observed as result of the conduction-band barrier lowering induced by the DID." @default.
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- W1966979969 date "1985-04-01" @default.
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- W1966979969 title "Doping interface dipoles: Tunable heterojunction barrier heights and band-edge discontinuities by molecular beam epitaxy" @default.
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- W1966979969 doi "https://doi.org/10.1063/1.95521" @default.
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