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- W1967131570 abstract "A procedure for the inverse modelling of GaAs/AlGaAs HEMT structures from DC I/V characteristic curves is reported for the first time. This procedure allows important structural parameters, including the aluminium fraction, dopant density, doped layer thickness, physical gate length and source resistance to be accurately obtained." @default.
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- W1967131570 date "1991-01-03" @default.
- W1967131570 modified "2023-09-25" @default.
- W1967131570 title "Procedure for inverse modelling of GaAs/AlGaAs HEMT structures from DC I/V characteristic curves" @default.
- W1967131570 cites W1481672268 @default.
- W1967131570 doi "https://doi.org/10.1049/el:19910052" @default.
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