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• W1967138532 endingPage "092105" @default.
• W1967138532 startingPage "092105" @default.
• W1967138532 abstract "Effects of indium as a surfactant for the growth of Si-doped Al0.75Ga0.25N epilayers by metal organic chemical vapor deposition have been studied. It was found that the use of indium as a surfactant improved the overall material quality of these epilayers, as evidenced by decreasing the (a) density of surface pits, (b) screw dislocation density, and (c) intensity of the deep level impurity transition with increasing indium flow rate. Hall effect measurements also yielded increased conductivity and electron concentration with increasing indium flow rate. The results suggested that indium as a surfactant counteracts the incorporation of defects responsible for self-compensation for n-type doping, namely, cation vacancies, in high Al-content AlGaN epilayers. A correlation between the intensity of the deep level impurity transition and screw dislocation density was also established." @default.
• W1967138532 created "2016-06-24" @default.
• W1967138532 creator A5035978829 @default.
• W1967138532 creator A5044851761 @default.
• W1967138532 creator A5055544896 @default.
• W1967138532 creator A5084743453 @default.
• W1967138532 date "2008-03-03" @default.
• W1967138532 modified "2023-09-27" @default.
• W1967138532 title "Si-doped high Al-content AlGaN epilayers with improved quality and conductivity using indium as a surfactant" @default.
• W1967138532 cites W1491923430 @default.
• W1967138532 cites W1514291166 @default.
• W1967138532 cites W1545562314 @default.
• W1967138532 cites W1587264451 @default.
• W1967138532 cites W1594513708 @default.
• W1967138532 cites W1659796918 @default.
• W1967138532 cites W1974011962 @default.
• W1967138532 cites W1974446364 @default.
• W1967138532 cites W1986774761 @default.
• W1967138532 cites W1990599646 @default.
• W1967138532 cites W1991988352 @default.
• W1967138532 cites W1996785357 @default.
• W1967138532 cites W2012232588 @default.
• W1967138532 cites W2019793760 @default.
• W1967138532 cites W2028855914 @default.
• W1967138532 cites W2041784851 @default.
• W1967138532 cites W2047471022 @default.
• W1967138532 cites W2056585910 @default.
• W1967138532 cites W2057414213 @default.
• W1967138532 cites W2059435969 @default.
• W1967138532 cites W2066517276 @default.
• W1967138532 cites W2087736612 @default.
• W1967138532 cites W2107227184 @default.
• W1967138532 doi "https://doi.org/10.1063/1.2890416" @default.
• W1967138532 hasPublicationYear "2008" @default.
• W1967138532 type Work @default.
• W1967138532 sameAs 1967138532 @default.
• W1967138532 citedByCount "36" @default.
• W1967138532 countsByYear W19671385322012 @default.
• W1967138532 countsByYear W19671385322013 @default.
• W1967138532 countsByYear W19671385322014 @default.
• W1967138532 countsByYear W19671385322015 @default.
• W1967138532 countsByYear W19671385322016 @default.
• W1967138532 countsByYear W19671385322017 @default.
• W1967138532 countsByYear W19671385322018 @default.
• W1967138532 countsByYear W19671385322019 @default.
• W1967138532 countsByYear W19671385322020 @default.
• W1967138532 countsByYear W19671385322021 @default.
• W1967138532 countsByYear W19671385322022 @default.
• W1967138532 countsByYear W19671385322023 @default.
• W1967138532 crossrefType "journal-article" @default.
• W1967138532 hasAuthorship W1967138532A5035978829 @default.
• W1967138532 hasAuthorship W1967138532A5044851761 @default.
• W1967138532 hasAuthorship W1967138532A5055544896 @default.
• W1967138532 hasAuthorship W1967138532A5084743453 @default.
• W1967138532 hasBestOaLocation W19671385322 @default.
• W1967138532 hasConcept C113196181 @default.
• W1967138532 hasConcept C119599485 @default.
• W1967138532 hasConcept C127413603 @default.
• W1967138532 hasConcept C131540310 @default.
• W1967138532 hasConcept C147789679 @default.
• W1967138532 hasConcept C159122135 @default.
• W1967138532 hasConcept C159985019 @default.
• W1967138532 hasConcept C178790620 @default.
• W1967138532 hasConcept C185592680 @default.
• W1967138532 hasConcept C192562407 @default.
• W1967138532 hasConcept C42360764 @default.
• W1967138532 hasConcept C43617362 @default.
• W1967138532 hasConcept C49040817 @default.
• W1967138532 hasConcept C543292547 @default.
• W1967138532 hasConcept C544956773 @default.
• W1967138532 hasConcept C57410435 @default.
• W1967138532 hasConcept C57863236 @default.
• W1967138532 hasConcept C58226133 @default.
• W1967138532 hasConcept C69990965 @default.
• W1967138532 hasConcept C71987851 @default.
• W1967138532 hasConceptScore W1967138532C113196181 @default.
• W1967138532 hasConceptScore W1967138532C119599485 @default.
• W1967138532 hasConceptScore W1967138532C127413603 @default.
• W1967138532 hasConceptScore W1967138532C131540310 @default.
• W1967138532 hasConceptScore W1967138532C147789679 @default.
• W1967138532 hasConceptScore W1967138532C159122135 @default.
• W1967138532 hasConceptScore W1967138532C159985019 @default.
• W1967138532 hasConceptScore W1967138532C178790620 @default.
• W1967138532 hasConceptScore W1967138532C185592680 @default.
• W1967138532 hasConceptScore W1967138532C192562407 @default.
• W1967138532 hasConceptScore W1967138532C42360764 @default.
• W1967138532 hasConceptScore W1967138532C43617362 @default.
• W1967138532 hasConceptScore W1967138532C49040817 @default.
• W1967138532 hasConceptScore W1967138532C543292547 @default.
• W1967138532 hasConceptScore W1967138532C544956773 @default.
• W1967138532 hasConceptScore W1967138532C57410435 @default.
• W1967138532 hasConceptScore W1967138532C57863236 @default.
• W1967138532 hasConceptScore W1967138532C58226133 @default.
• W1967138532 hasConceptScore W1967138532C69990965 @default.
• W1967138532 hasConceptScore W1967138532C71987851 @default.
• W1967138532 hasIssue "9" @default.
• W1967138532 hasLocation W19671385321 @default.
• W1967138532 hasLocation W19671385322 @default.

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