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- W1967152011 abstract "X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM) have been applied to investigate the surface chemistry and morphology of InP wafers photochemically etched under 308 nm illumination from a XeCl excimer laser. The etching experiments were carried out at ambient temperature and in a low-pressure (1 μbar) atmosphere of Cl2 (10%) diluted in He. During the process, the samples were exposed to laser radiation with fluences of 73 mJ/cm2 or 114 mJ/cm2. Both fluence values are below the ablation threshold of 140 mJ/cm2 for InP. The mapping of the photoelectron spectral line intensities of In (3d5/2), Cl (2p3/2), and P (2p3/2) displayed the distribution of In–Cl and In–P compounds on the surface of the wafer. The chemical composition and morphology of the etched surface were found to be dependent on laser fluence. Surfaces with a fine granular structure were observed at a lower fluence, while at higher fluences, surfaces with a linear grating-like structure were formed. More chlorine is bound to the surface prepared at a higher fluence." @default.
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- W1967152011 date "1998-05-01" @default.
- W1967152011 modified "2023-09-26" @default.
- W1967152011 title "XPS study of XeCl excimer-laser-etched InP" @default.
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- W1967152011 doi "https://doi.org/10.1016/s0169-4332(97)00746-0" @default.
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