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• W1967156711 abstract "High-mobility strained Ge0.958Sn0.042 p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide [(NH4)2S] surface passivation were demonstrated. A ∼10 nm thick fully-strained single crystalline GeSn layer was epitaxially grown on Ge (1 0 0) substrate as the channel layer. (NH4)2S surface passivation was performed for the GeSn surface, followed by gate stack formation. Ge0.958Sn0.042 p-MOSFETs with (NH4)2S passivation show decent electrical characteristics and a peak effective mobility of 509 cm2/V s, which is the highest reported peak mobility obtained for GeSn channel p-MOSFETs so far." @default.
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• W1967156711 date "2013-05-01" @default.
• W1967156711 modified "2023-10-01" @default.
• W1967156711 title "Strained germanium–tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivation" @default.
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• W1967156711 doi "https://doi.org/10.1016/j.sse.2013.01.031" @default.
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