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• W1967318940 abstract "Real-time measurements of GexSi1−x/Si(001) composition and segregation dynamics in Sn/Si(001) in molecular beam epitaxy are demonstrated using parallel detection reflection electron energy loss spectroscopy. Parallel detection enables quantitative acquisition of low-loss spectra in a time of &lt;500 μs and surface composition determination in GexSi1−x/Si(001) via Ge L2,3 core loss analysis to a precision of approximately 2% in time of order 1 s. Segregation and trapping kinetics of monolayer thickness Sn films during Si epitaxy on Sn-covered Si(100) has also been studied using the Sn M4,5 core loss." @default.
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• W1967318940 date "1997-11-03" @default.
• W1967318940 modified "2023-09-27" @default.
• W1967318940 title "<i>In situ</i> real-time analysis of alloy film composition and segregation dynamics with parallel detection reflection electron energy loss spectroscopy" @default.
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• W1967318940 doi "https://doi.org/10.1063/1.120136" @default.
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