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• W1967382521 abstract "In this paper, the response surface methodology is proposed to model nonlinear microwave devices using different sampling techniques. Each of the methods represents a distinct approach: exploration-oriented (Voronoi tessellation), nonlinearity-exploitation-oriented (LOcal Linear Approximation) and model-error-minimization-oriented. This allows to build accurate and compact global behavioral models of drain voltage at different harmonics of a 0.15 μm GaAs HEMT transistor with only few hundreds of samples. After choosing the best sampling technique, two types of global models are compared: Radial Basis Function and Kriging. It is shown that the modeling convergence depends on the model type, and better results are obtained using the Kriging model." @default.
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• W1967382521 date "2014-05-01" @default.
• W1967382521 modified "2023-09-27" @default.
• W1967382521 title "Nonlinear behavioral models of HEMTs using response surface methodology" @default.
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• W1967382521 doi "https://doi.org/10.1109/nemo.2014.6995706" @default.
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