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- W1967531512 abstract "The evolution in materials and process fabrication technologies is posing new challenges and application areas in large area electronics. A driving force in this evolution is silicon thin film technology. Interest in thin film silicon extends well beyond the active matrix liquid crystal display and stems from a variety of desired technological features including low temperature manufacturing with few constraints on the substrate size, material, or topology. More recently, the extension of the technology to plastic substrates has received considerable attention. Interests on plastic is being driven by the need for lightweight, unbreakable, and eventually foldable screens for displays and imagers, along with a plethora of new generation applications ranging from media to bio-medicine. Although thin film silicon, by virtue of material structure, does not enjoy the same electronic properties, such as speed and current drive capability compared to crystalline Si, it is currently being challenged with new material and device structures that can meet performance requirements, particularly that of active matrix backplanes for a new generation of displays and imagers. This talk will review precisely these challenges, and address device-and materials-related issues from the standpoint of scaling channel lengths and compacting transistor area through use of vertical transistor structures, and nano-structuring thin film silicon for high mobility, stability, and drive current, and more importantly, CMOS realization for eventual system-on-panel integration at sub-150°C for plastic compatibility." @default.
- W1967531512 created "2016-06-24" @default.
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- W1967531512 date "2010-06-01" @default.
- W1967531512 modified "2023-09-27" @default.
- W1967531512 title "Nanocrystalline silicon thin film transistors" @default.
- W1967531512 doi "https://doi.org/10.1109/msmw.2010.5545993" @default.
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