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- W1967579400 abstract "A fabrication method of thin single-crystalline silicon wires on SiO 2 is reported. The wires are fabricated by anisotropic wet etching of (110) and (100) SOI wafers. We obtained a thin (110) SOI wire of 0.2 µm width and 0.2 µm height with a rectangular cross section. Since the (110) SOI wires are enclosed by a pair of ultraflat {111} side walls parallel to each other, this method has the potential to form ultranarrow wires by careful control of the etching conditions." @default.
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- W1967579400 date "1991-09-01" @default.
- W1967579400 modified "2023-10-14" @default.
- W1967579400 title "Fabrication of Thin Silicon Wires by Anisotropic Wet Etching of SOI Structures" @default.
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- W1967579400 doi "https://doi.org/10.1143/jjap.30.l1605" @default.
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